Taipei Tech 國立臺北科技大學

Electric-Optic Engineering


 

Fiber Optics Communication Device Lab

Phone: +886-2-2771-2171 Ext 4692
Fax: +886-8773-3216
Office: Everlight Building, Room 1033
E-mail: wjho@ntut.edu.tw
 

 

Introduction

Wen-Jeng Ho Professor  in electro-optical engineering

Wen-Jeng Ho received the M.S. degree in the Institute of the electronic engineering from the National Chiao-Tung University, Hsinchu, Taiwan, and the Ph. D degree in the Institute of the electrical engineering from the National Tsing Hwa University, Hsinchu, Taiwan, in 1980 and 1997, respectively.


In 2005, he joined the faculty of National Taipei University of Technology in the department of Opto-Electronic Engineering. His current research interests include the fabrications and applications of  lightwave communication components and the photovolatic devices in design, fabrication, and characterization.

 

 

Educations

  • National Tsing Hua University - Institute of Electrical Engineering - Ph.D.
     
  • National Chiao Tung University - Institute of Electronics Engineering - Master

 

 

Professional Experiences

  • National Taipei University of Technology, Department of Photonics / Associate Professor
     
  • Optical Engineering, National Taipei University of Technology / Assistant Professor
     
  • Chung Yuan Christian University, Department of Electronics / Assistant Professor
     
  • Ministry of Economic Affairs Intellectual Property Office / Patent Examination external review committee member
     
  • Chunghwa Telecom Telecommunication Laboratories - Prospect Research / Research Associate and Project Leader
 

 

Research Area
 
  1. Optical Communication Technology
     
  2. Development of novel optical materials, Optical Component Development and Photovoltaic Element Research
     
  3. Development and Application of Solar Cells
 
Reseach Project
2013:
  • Industry-University Cooperation「Fiber Optical CATV and Optical Communication Industrial League Project (1/3)」(NSC-102-2218-E-027-002) (in execute)
  • Industry-University Cooperation「Duplex radio-Over-Fiber (ROF) System Based on Cascade-Type Single-Electrode Intensity-Modulators and Optical Frequency Quadrupling Techniques 」(NSC102-2622-E-027-015-CC3) (in execute)
  • NSC Project「Efficiency Enhancement of Si-based and GaAs-based Solar cells Using Novel Indium Nanoparticles Surface Plasmons-(3/3)」(NSC 100-2221-E-027-053-MY3) (in execute)
2012:
  • NSC Project「Efficiency Enhancement of Si-based and GaAs-based Solar cells Using Novel Indium Nanoparticles Surface Plasmons-(2/3)」(NSC 100-2221-E-027-053-MY3) (closed)
2011:
  • NSC Project「Efficiency Enhancement of Si-based and GaAs-based Solar cells Using Novel Indium Nanoparticles Surface Plasmons-(1/3)」(NSC 100-2221-E-027-053-MY3) (closed)
2010:
  • NSC Project「High conversion efficiency solar cell improved by distributed p-n junction and self-biasing novel concepts」(NSC 99-2221-E-027-050-)。(已結案)
  • NSC Project「Single-Photon Detector Sub-Assembly Based on SU-8 Fiber Hole Passive Self-Align and 2-Stage TE Cooler Package Technologies」(NSC 99-2622-E-027 -030 -CC3) 。(closed)
  • NCC Project「Limited broadcast digital TV services optical network monitoring system」(NCCL99016-990412) 。(closed)
  • NSC Project「Efficiency Enhancement Study of Solar Cell by Self-Assembly Microsphere Anti-Reflection Coating 」(NSC 99-2815-C-027-01) 。(closed)
2009
  • NSC Project「Single Photon InAlAs/InP Heterostructure Avalanche Photodiode Fabrication and Single Photon Device in the QKD Optical Communication Application」(NSC 97-2221-E-027-008-MY2)。(closed)
  • NSC Project「Wide angle - Low reflection - Surface Treatment Applied to GaAs Solar Cells」(NSC 98-2815-C-027-003-E) 。(closed)
  • MOE Characteristics Project「New generation of optical / microwave transmission systems(3/3)」(台技(一)字第0980094902號) 。(closed)
2008
  • NSC Project「Single Photon InAlAs/InP Heterostructure Avalanche Photodiode Fabrication and Single Photon Device in the QKD Optical Communication Application」(NSC 97-2221-E-027-008-MY2)。(closed)
  • MOE Characteristics Project「New generation of optical / microwave transmission systems(2/2)」(台技()字第097005962F號)。(closed)
2007
  • MOE,University-Industry Project「High-Performance, Low-Cost Avalanche Photodetectors Process Development and Characterization」。(closed)
  • NSC Project「High Performance 1310-1550 nm Single Photon Avalanche Photodiodes (NSC 96-2221-E-027-043-) 。(closed)
  • MOE Characteristics Project「New generation of optical / microwave transmission systems(1/2)」(台技(一)字第0960097714C號) 。(closed)
 
 
Award and Honnor
2013
  • 專題生(林尹翔、陳瑋凡、張椗淇、陳婉君), 獲得臺北科技大學光電系專題競賽「第二名」
2012:
  • 碩士研究生(邱詠清)論文榮獲光電與通訊工程研討會「優秀論文獎」
  • 何文章 教授 榮獲101年度技術及知識應用型產學合作計畫電資通訊領域成果發表暨績效考評會「海報展示優良獎」
  • 專題生(郭智維、蔡育揚、蔡廷安、李孟原), 獲得臺北科技大學光電系專題競賽「第三名」
2011:    
  • 博士研究生(李奕攸)論文榮獲國際光電科技研討會(IPC-2011)「學生論文獎」
  • 專提生(林其和) 榮獲本校100學年度「金手獎」比賽「電資學院佳作」
  • 專題生(林其和、張育銘、林致孚), 獲得臺北科技大學光電系專題競賽「第三名」
  • 研究團隊(林其和, 蔡帛宏, 鄧伊竣, 劉政杰, 李奕攸), 獲得太陽光電第三屆論壇暨大專院校研發成果產品競賽材料元件組「第二名」
2010: 
  • 碩士研究生(謝明利)論文榮獲國際光電科技研討會(OPT-2010)「學生論文獎」
  • 專題生(張蓓茹、賴建甫、鄧伊竣、郭翰綸), 獲得臺北科技大學光電系專題競賽「第三名」
2009
  • 碩士研究生(楊育峰)論文榮獲台灣光電科技研討會(OPT-2009)「學生論文獎」  
  • 碩士研究生(林逸仁)論文榮獲臺北科技大學能源與太陽光電研討會海報論文「特優獎」 
  • 碩士研究生(張裕昌)論文榮獲臺北科技大學能源與太陽光電研討會海報論文「優等獎」 
  • 碩士研究生(林志倫)論文榮獲臺北科技大學能源與太陽光電研討會海報論文「優等獎」
  • 專題生(楊礎豪、王毅強、莊淇凱、李國強), 獲得臺北科技大學光電系專題競賽「第三名」
2008
  • 研究生沈裕富同學,投稿2008 MRS-T Annual Meeting:榮獲2008年中國材料科學學會,材料科學學生論文獎「佳作獎
  • 研究生沈裕富同學,2008年智慧型系統工程應用研討會(ISC)學生專題論文競賽,獲得第二名
  • 研究生周林甫同學,2008年智慧型系統工程應用研討會(ISC)學生專題論文競賽,獲得第二名
2007
  • 專題生(邱建豪), 獲得臺北科技大學光電系專題競賽「第三名」

 

 

Journal Article

  1. Jheng-Jie LiuWen-Jeng Ho, Jhih-Kai Syu, Yi-Yu Lee, Ching-Fuh Lin, and Hung-Pin Shiao, Performance Improvement of a Triple-Junction GaAs-Based Solar Cell Using a SiO2-Nanopillar/SiO2/TiO2 Graded-Index Antireflection Coating”,International Journal Of Nanotechnology,2013 (Accepted) (SCI)
  2. Yi-Yu Lee,Wen-Jeng Ho, Cheng-Ming Yu, Jheng-Jie Liu, Ching-Fuh Lin, and Hung-Pin Shiao, “Current-Matched Improvement of Triple-Junction GaAs-Based Solar Cells using Periodic Patterns Incorporated with Indium Nanoparticle Plasmonics,” Nanoscience and Nanotechnology Letters, 2013. (Accepted) (SCI)
  3. Wen-Jeng Ho, Yi Yu Lee, Yuan Tsz Chen, “Characterization of Plasmonic Silicon Solar Cells Using Indium Nanoparticles/TiO2 Space Layer Structure,” Advances in Applied Materials and Electronics Engineering II, Advanced Materials Research Vol. 684, pp 16-20, Hong Kong, April 24, 2013. (EI)
  4. Wen-Jeng Ho, Shih-Hao Ou, Yi-Yu Lee, Jheng-Jie Liu, “Broadband wavelength and wide-acceptance angle of the SiO2 sub-wavelength surface structure for solar cells using CF4 reactive ion etching,” Thin Solid Films, Volume 529, Pages 257–262, February 1, 2013.(SCI)
  5. J. M. LinW.J. HoY.-P. ChangH.-H. Lu, “Characterization of ROF Signal Based on Cascaded Optical Carrier Suppression Modulation Technique,” Laser PhysicsVolume 22Issue 12pp 1856-1860, December 1, 2012. (SCI)
  6. J.M. Lin, W.J Ho, Y.-P. Chang, H.-H. Lu, “Transmitted Characterization of 16 GHz/1.25 Gbps ROF Signal Using a Low-cost Cascaded Optical Carrier Suppression Modulation,” Opto-Electronics and Communications Conference (OECC 2012), pp. 321-322, July 2-6, 2012. (EI)
  7. J.K.Syu, W.J. Ho, J.J. Liu, Y.Y. Lee, C.C. Liao, J.Y. Wu, Y.C. Chiu, and H.P. Shiao, “Performance Characterization of Triple-Junction GaAs Solar Cell with Double Layers AR-Coating and Sub-Wavelength AR-Coating,” Opto-Electronics and Communications Conference (OECC 2012), pp. 675-676, July 2-6, 2012. (EI)
  8. Q.R. Lai, W.J. Ho, J.J. Liu, Y.Y. Lee, C.C. Liao, J.Y. Wu, and Y.C. Chiu, “Photocurrent of MOS-Si Photovoltaic Device Enhanced by an Auxiliary Biasing Solar Cell,” Opto-Electronics and Communications Conference (OECC 2012), pp. 701-702, July 2-6, 2012. (EI)
  9. Cheng-Ming Yu, Wen-Jeng Ho, Yi-Yu Lee, Jheng-Jie Liu, Chin-Cing Liao, Wei-Ting Wang, Shu-Chia Shiu, Ching-Fuh Lin and Hung-Bin Shiau, “Photovoltaic Performances Enhanced by Novel Indium Nanoparticles Using Surface Plasmonic in GaAs-Based 3-Junction Solar Cells,” Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE, Page 000835 – 000837, June 3-8, 2012. (EI)
  10. Jheng-Jie Liu, Wen-Jeng Ho, Yi-Chia Hsieh, “High Multiplication Gain of InGaAs/InP APDs Using Hetero-Multiplication Region and Novel Single-Diffusion Device Process,” Advanced Science Letters, volume 8, pp. 479-483, April 15, 2012. (SCI)
  11. J. M. LinW. J. Ho, “Dynamic-performance Characterization of C-Band EDFA Using ASE-Power Peak Selective Feedback Gain-Clamping,” Laser PhysicsVolume 22Issue 4pp 765-769,  April 1, 2012.
  12. J. M. Lin, W. J. Ho, Y. F. Yang, “Characterization of 1550 nm sub-picoseconds optical pulse using a gain-switching distributed feedback laser with CW-mode external-injection and pulse-mode self-injection,” Laser Physics, Volume 22, Issue 2, pp.428-432,Feb. 1, 2012. (SCI)
  13. Wen-Jeng Ho, Ming-Li Hsieh, Yi-Yu Lee, Jheng-Jie Liu, Jhih-Kai Syu, Quan-Ru Lai, and Cheng-Ming Yu, “Efficiency improvement of 25.7% using a voltage biasing transparent electrode for MIS transistor-based silicon solar cells,” Surface & Coatings Technology, Available online 20 January 2012. (In Press) (SCI)
  14. Wen-Jeng Ho, Ming-Li Hsieh, Yi-Yu Lee, Jheng-Jie Liu, Jhih-Kai Syu, Quan-Ru Lai, and Cheng-Ming Yu, “Efficiency improvement of 25.7% using a voltage biasing transparent electrode for MIS transistor-based silicon solar cells,” Surface & Coatings Technology, (Accepted, 2012.01). (SCI)
  15. Wen-Jeng Ho, Shih-Hao Ou, Yi-Yu Lee, and Jheng-Jie Liu,“Broadband wavelength and wide-acceptance angle of SiOsub- wavelength surface structure for solar cells using CF4 RIE etching,”Submitted to Thin Solid Film (TSF-D-11-02490, 2011) (SCI)
  16. J. M. Lin and W. J. Ho“Dynamic_Performance Characterization of C_Band EDFA Using ASE_Power Peak_Selective Feedback Gain_Clamping,” Laser Physics, (Accepted, 2011.12). (SCI)
  17. Jheng-Jie Liu, Wen-Jeng HoYi-Chia Hsieh, “High Multiplication Gain of InGaAs/InP APDs Using Hetero-Multiplication Region and Novel Single-Diffusion Device Process,” Advanced Science Letters(Accepted, 2011,09). (SCI)
  18. J. M. Lin , W. J. Hoand Y. F. Yang, "Characterization of 1550 nm Sub-Picoseconds Optical Pulse Using a Gain-Switching Distributed Feedback Laser with CW-Mode External-Injection and Pulse-Mode Self-Injection," Laser Physics, ( Accepted, 2011.09). (SCI)
  19. Wen-Jeng Ho, Jheng-Jie Liu, Shih-Hao Ou, Cheng-Ju Chen and Hsuan-Ming Tang, “Fabrication and performance characterization of 1550 nm heteromultiplication avalanche photodiodes for single photons detection,” Proc. of SPIE, Vol. 7934, pp. 79341E-1-79341E-10, 2011. (EI)
  20. Wen-Jeng Ho, Hsiao-Chun Peng, Hai-Han Lu, Cheng-Ling Ying, and Chung-Yi Li,“Novel ROF/FTTX/CATV hybrid three-band transport system,”Optics Express, Vol.19, No. 7, pp. 6980-6989, 2011. (SCI) 
  21. Chun-Cheng Lin, Hai-Han LuWen-Jeng Ho, Hsiao-Chun Peng, Chung-Yi Li, “A Bidirectional WDM Transport System Based on RSOAs and Optoelectronic Feedback Technique,” IEEE Communications Letters, Vol. 14, No. 10, pp. 969-971, October 2010. (SCI)
  22. W. J Ho, H. H. Lu, C. H. Chang, W. Y. Lin, and H. S. Su, “Direct Modulation with Side-Mode injection in Optical CATV Transport Systems,” Progress In Electromagnetics Research Letters (PIERL), Vol. 11, pp. 73-82, 2009. (SCI)
  23. Wen-Jeng Ho, Hai-Han Lu, Jen-Shiang Shin, Chun-Cheng Liu, Ya-Ling Houng  and Cheng-Ling Ying, “Full-duplex ROF transport systems based on a broadband ASE light source and nonlinear distortion suppression scheme,” J. Opt. A: Pure Appl. Opt., Vol. 11,105403 (5pp), 2009. (SCI).
  24. Hai-Han Lu, Ardhendu Sekhar Patra, Shah-Jye Tzeng, Wen-Jeng Ho and Hoshin Yee, Radio-on-hybrid WDM transport systems based on mutually injection-locked Fabry-Perot laser diodes,” Optical Fiber Technology, Vol. 15, No. 1, pp. 21-25, January, 2009.(SCI)
  25. Wen-Jeng HoMu-Rung Yu, “Improving the Silicon Solar Cell Performances by SiO2/TiO2 Double Layer Antireflection Coating,”Journal of National Taipei University of Technology, Vol. 42, No. 1, pp. 17-29, 2009. (ELSE1 )
  26. Y. J. Lin, W. J. Ho, and Hung-Bin Shiau, “Efficiency of 19.4% GaAs Solar Cell Using Spin-on Single Layer TiO2 Anti-Reflection Thin Film,” Journal of Taiwan Vacuum Society, Vol., 22, No. 4, page 69, Dec. 12-18, 2009. (ELSE1 )
  27. H. H. Lu, W. J. Ho, W. I. Lin, H. C. Peng, P. C. Lai, and H. Yee, “Radio-on-DWDM Transport Systems Based on Injection-Locked Fabry-Perot Laser Diodes,” IEICE Trans B: Communications, Vol. E91-B, pp. 848 – 853, March 2008. (SCI)
  28. H. H. Lu, A. S. Patra, H. W. Wu, S. J. Tzeng, W. J. Ho, and H. Yee, “Employing Split-Band Technique and Fabry-Perot Etalon Filter to Improve Directly Modulated Fiber Optical CATV System Performances”, Optical Fiber Technology, Vol. 14, No. 3, pp. 227-231, July 2008. (SCI)
  29. H. H. Lu, W. I. Lin, W. J. Ho, C. Y. Lee, S. J. Tzeng, and P. C. Lai, “Radio over DWDM Transport Systems for PHS/VICS/ETC/SB Applications FBG,” IEEE Communications Letters, Vol. 11, No. 12, pp. 995-997, 2007. (SCI)
  30. H. H. Lu, A. S. Patra, W. J. Ho, P. C. Lai, and M. H. Shiu, “Full-Duplex Radio-Over-Fiber Transport System Based on FP Laser Diode with OBPF and Optical Circulator with Fiber Bragg Grating,” IEEE Photon. Technol. Lett., Vol.19, No. 20, pp. 1652-1654, 2007.(SCI)
  31. C. L. Yao, S. L. Lee, I. F. Jang, and W. J. Ho, “Wavelength-Selectable Lasers With Bragg-Wavelength-Detuned Sample Grating Reflectors,” J. Lightwave Technol., Vol. 24, No. 9, pp. 3480-3489, 2006. (SCI)
  32. T. C. Peng, Y. H. Huang, C. C. Yang, M. C. Wu, C. L. Ho, and W. J. Ho, “High-speed AlGaInAs ridge-waveguide FP laser diode by optimizing exterior construction,” Solid-State Electron., Vol. 50, No. 2, pp. 142-148, 2006. (SCI)
  33. T. P. Hsieh, H. -S. Chang, W. Y. Chen, W. H. Chang, T. M. Hsu, N. T. Yeh, W. J. Ho, P. C. Chiu, and J.I. Chyi, “Growth of Low-Density InGaAs Quantum Dot for Single Photon Source by Metal-Organic Chemical Vapor Deposition,” Nanotechnology, Vol. 17, No. 2, pp. 512-515, 2006. (SCI)
  34. C. W. Hu, F. M. Lee, K. F. Huang, C. L. Tsai, M. C. Wu, Y. H. Huang, and W. J. Ho, “Linear GRINSCH 1.55-µm  InGaAsP/InP Strained Multiple Quantum Well Laser Diodes Grown by Substrate Temperature Control,” J. Electrochemical Soc., Vol.153, No. 4, pp. 309-313, 2006. (SCI)
  35. P. H. Lei, C. D. Yang, M. Y. Wu, C. W. Hu, M. C. Wu, Y. H. Huang, and W. J. Ho, “Optimization of active region for 1.3 um GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes,” J. Electron. Mater., Vol. 35, No. 2 , pp. 243-249, 2006. (SCI)
  36. P. H. Lei, C. D. Yang, M. Y. Wu, M. C. Wu, K. Y. Cheng, C. C. Lin, and W. J. Ho, “Effects of n-type modulation-doping barriers and a linearly graded-composition GaInAsP intermediate layer on 1.3 um AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes,” J. Vac. Sci. Technol. Vol. B 24, No. 2, pp. 623-628, 2006. (SCI)
  37. Y. H. Huang, C. C. Yang, T. C. Peng, M. C. Wu, C. L. Ho, and W. J. Jo, “Alignment tolerance enlargement of a high-speed photodiode by a self-positioned micro-ball-lens,” IEEE Photon. Technol. Lett., Vol.18, No.1, pp. 112-114, 2006. (SCI)
  38. S.-.L. Lee, C.-J. Wang, P.-L. Jiang, I.-F. Jang, H.-W. Chang, C.-L. Yao, C.-C. Lin, W.-J. Ho, X. Zhang, and Y.-H. Jan, “Two-Section Bragg-Wavelength- Detuned DFB Lasers and Their Applications for Wavelength Conversion,” IEEE J. of Selected Topics in Quantum ElectronicsVol. 11, No. 5, pp.1153-1161, Sept.-Oct. 2005. (SCI)
  39. T.-P. Hsieh, N. -T. Yeh, P.-C. Chiu, W.-H. Chang, T. M. Hsu, W. -J. Ho, and J.-I. Chyi, “1.55 mm Emission from InAs Quantum Dots Grown on GaAs,” Appl. Phys. Lett., Vol. 87, No.15, pp. 151903 - 151903-3, Oct. 2005. (SCI)
  40. Tung-Po Hsieh, Pei-Chin Chiu, Yu-Chuan Liu, Nien-Tze Yeh, Wen-Jeng Ho, and Jen-Inn Chyi, “Selective growth of InAs quantum dots on patterned GaAs,”  J. Vac. Sci. Technol. B., Vol. 23, No.1, pp. 262-266, Jan. 2005. (SCI)
  41. Te-Chin Peng, Chih-Chao Yang, Yun-Hsun Huang, Meng-Chyi Wu, Chong-Lung Ho, and  Wen-Jeng Ho, “Self-terminated oxide polish technique for the waveguide ridge laser diode fabrication,” J. Vac. Sci. Technol. B., Vol. 23, No. 3, pp. 1060 -1063, May 2005. (SCI)
  42. Pei-Chin Chiu, Nien-Tze Yeh, Chao-Chi Hong, Tung Po Hsieh, Yao-Tsong Tsai, Wen-Jeng Ho, and Jen-Inn Chyi , “InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth,” Appl. Phys. Lett., Vol. 87, 091115, August 2005. (SCI)
  43. Chia-Lung Tsai, Feng-Ming Lee, Chih-Wei Hu, Meng-Chyi Wu, Sun-Chien Ko, Hai-Lin Wang, and Wen-Jeng Ho, “Fabrication and characterization of a planarized vertical-cavity surface-emitting laser by using the silicon oxide,” J. Vac. Sci. Technol. B., Vol. 23, No.4, pp.1428-1433, July 2005. (SCI)
  44. C. L. Tsai, F. M. Lee, F. Y. Cheng, M. C. Wu, S. C. Ko, H. L. Wang , W. J. Ho, “Silicon Oxide-Planarized Single-Mode 850-nm VCSELs with TO Package for 10Gbps Data Transmission,” IEEE Electron Device Letters., Vol. 26, No. 5,  304-307, May 2005. (SCI)
  45. C. L. Tsai, C. W. Hu, F. M. Lee, F. Y. Cheng, M. C. Wu, S. C. Ko, W. J. Ho, “High-Performance SiOx Planarized GaInNAs VCELs,”IEEE Trans. on  Electron Devices., Vol. 52, No. 5, 1033-11036, May 2005. (SCI)
  46. C. C. Yang, T. C. Peng, Y. H. Huang, M. C. Wu, C. L. Ho, and W. J. Ho, “A simple and low-cost fabrication of polymeric vertical microlens using dip method,” IEEE Photon. Technol. Lett., Vol. 17, No.3, 603-605, March 2005. (SCI)
  47. Yo-Yu Chen, Jia-Ren Lee, Meng-Luan Weng, Chien-Rong Lu, Bing-Ruey Wu and Wen-Jeng Ho “Optical properties of GaNAs/GaAs triple quantum well structures,” Journal of Physics and Chemistry of Solids., Vol. 65, No. 11, Pages 1857-1860, 2004. (SCI)
  48. C. L. Tsai, C. W. Ho, C. Y. Huang, F. M. Lee, M. C. Wu, H. L. Wang, S. C. Ko, W. J. Ho, J. Huang, and J. R. Deng, “Fabrication and characterization of    650-nm resonant-cavity light-emitting diodes,” J. Vac. Sci. Technol. B., Vol. 22, pp. 2518-2521, 2004. (SCI)
  49. C. D. Yang, P. H. Lei, D. J. Pong, M. Y. Wu, C. L. Ho, W. J. Ho, M. C. Wu, and K. Y. Cheng, “Edge-coupled InGaAs InGaAs p-i-n photodiode with a light funnel waveguide,” IEEE J. Quantum Electron., Vol. 40, No. 11, pp. 1607-1613, 2004. (SCI)
  50. M. Y. Wu, C. L. Tsai, M. C. Wu, C. L. Ho, W. J. Ho, “1.3 μm compressive-strain GaInAsP/GaInAsP multi-quantum-well laser diodes with a tensile- strain GaInP electron stopper layer,” Solid-State Electron., Vol. 48, pp. 1651-1654, 2004. (SCI)
  51. M. Y. Wu, P. H. Lei, C. L. Tsai, C. W. Hu, M. C. Wu, W. J. Ho, “Growth and characterization of compressive-strain GaInAsP/InP multiple-quantum-well   laser diodes with the tensile-strain GaInP quantum barrier,” J. Vac. Sci. Technol. B., Vol. 22, pp. 961-965, 2004. (SCI)
  52. K. F. Huang, T. P. Hsieh, N. T. Yeh, W. J. Ho, J. I. Chyi, and M. C. Wu, “1.3 um InAs/GaAs quantum dots directly capped with GaAs grown by metalorganic chemical vapor deposition,” J. Cryst. Growth, Vol. 264, pp. 128-133, 2004. (SCI)
  53. W. Liang, K. T. Tsen, D. K. Ferry, M. C. Wu, C. L. Ho, and W. J. Ho, “Relatively large electric-field induced electron drift velocity observed in an    InGaAs-based p-i-n semiconductor nanostructure,” Semiconductor Science Technology, Vol. 19, pp. S23-S24, 2004. (SCI)
  54. M. Y. Wu, P. H. Lei, C. L. Tsai, C. W. Hu, M. C. Wu, W. J. Ho, “Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers,” Jpn. J. Appl. Phys., Vol. 42, pp. L1507-L1508, 2003. (SCI)
  55. W. Liang, K. T. Tsen, D. K. Ferry, M. C. Wu, C. L. Ho, and W. J. Ho, “Large electric-field induced electron drift velocity observed in an InGaAs based p-i-   n semiconductor nanostructure at T = 300 K,” Appl. Phys. Lett., Vol. 83, pp. 1438-1440,  2003. (SCI)
  56. W. Liang, K. T. Tsen, O. F. Sankey, S. M. Komirenko, K. W. Kim, V. A. Kochelap, M. C. Wu, C. L. Ho, W. J. Ho, and H. Morkoc, “Observation of optical phonon instability induced by drifting electrons in semiconductor nanostructures,” Appl. Phys. Lett., Vol. 82, No. 12, pp.1968-1970, 2003. (SCI)
  57. C. D. Yang, C. L. Ho, M. Y. Wu, J. Y. Su, W. J. Ho, and M. C. Wu, “Investigation of epitaxial lift-off the InGaAs p-i-n photodioded to the AlAs/GaAs distributed Bragg reflector,” Solid-State Electron., Vol. 47, pp. 1763-1767, 2003. (SCI)
  58. M. Y. Wu, C. W. Hu, P. H. Lei, M. C. Wu, Y. H. Huang, and W. J. Ho, “Very low threshold current operation of 1.3-um AlGaInAs/AlGaInAs strain- compensated multiple-quantum-well laser diodes,” Jpn. J. Appl. Phys., Vol. 42, pp. L643-L645, 2003. (SCI)
  59. P. H. Lei, Z. B. Wang, C. C. Lin, W. J. Ho, and M. C. Wu, “Effect of InGaAsP GRINSCH intermediate layer in the 1.3um AlGaInAs strain-compensated   multiple-quantum-well laser diodes,” IEE Pt. J. Vol. 150, pp. 541-544, 2003. (SCI)
  60. R. H. Horng, W. C. Peng, D. S. Wuu, W. J. Ho and Y. S. Huang, “Surface treatment and electrical properties of directly wafer-bonded InP epilayer on GaAs substrate, ” Solid-State ElectronicsVol. 46, No. 8, pp. 1103-1108, 2002. (SCI)
  61. Chong-Yi Lee, Wen-Jang Jiang, Meng-Chyi Wu and Wen-Jeng Ho, “The influence of InGaP barrier layer on the characteristics of 1.3 μm strain -compensated multiquantum-well InAsP/InP/InGaP laser diodes, ” Solid-State ElectronicsVol. 46, No. 9, pp. 1389-1394, 2002. (SCI)
  62. Po-Hsun Lei, Ming-Yuan Wu, Chia-Chien Lin, Wen-Jeng Ho and Meng-Chyi Wu,“High-power and low-threshold-current operation of 1.3 μm strain- compensated AlGaInAs/AlGaInAs multiple-quantum-well laser diodes, ” Solid-State ElectronicsVol. 46, No. 12, pp. 2041-2044, 2002. (SCI)
  63. Po-Hsun Lei, Ming-Yuan Wu, Meng-Chyi Wu, Chong-Yi Lee, Wen-Jeng Ho, and Chia-Chien Lin, “1.3 µm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region,” J. Vac. Sci. Technol. B., Vol. 20, pp. 1013, 2002.(SCI)
  64. Po-Hsun Lei, Chia-Chien Lin, Wen-Jeng Ho, Meng-Chyi Wu, Lih-Wen Laih, “1.3-μm n-type modulation-doped AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes,” IEEE Transactions on Electron Devices, Vol. 49, No. 7, pp. 1129-1135, 2002. (SCI)
  65. Chong-Yi Lee, Lung-Chien Chen, Chia-Chien Lin, Meng-Chyi Wu, Der-Jing Peng, and Wen-Jeng Ho, “Effect of InGaP Barrier Thickness on the Performance of 1.3-µm InAsP/InP/InGaP Strain-Compensated Multiple- Quantum-Well Laser Diodes,” Jpn. J. Appl. Phys., Vol. 41, No.2, pp. 697-699, 2002. (SCI)
  66. Ing-Fa Jang, San-Liang Lee, Chi-Yu Wang, Lih-Wen Lai, Wen-Jeng Ho, Yu-Heng Jan, “Realization and performance of as-fabricated SGDBR multiwavelength laser arrays,” Photonics Technology Letters, IEEE, Vol. 13, No. 9, pp. 933-935, 2001. (SCI)
  67. Chih-Cheng Lu, Chong-Long Ho, Meng-Chyi Wu, Tian-Tsrong Shi, Wen-Jeng Ho, “Electrical characterization of SiOx and SiNxprepared by PECVD technique on In0.53Ga0.47As,” Dielectrics and Electrical Insulation, IEEE Transactions on Vol. 8, No. 6, pp. 1011-1015, 2001.( SCI)
  68. Chong-Long Ho, Wen-Jeng Ho, Meng-Chyi Wu, “Edge-coupled InGaAs p-i-n photodiode with the pseudowindow defined by an etching,” IEEE Journal of Quantum Electronics, Vol. 37, No. 11, pp. 1409–1411, 2001. (SCI)
  69. Chong-Yi Lee, Meng-Chyi Wu, Hung-Pin Shiao and Wen-Jeng Ho, “Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition, ” Journal of Crystal GrowthVol. 208, No. 1-4, pp. 137-144, 2000. (SCI)
  70. Chong-Yi Lee, Meng-Chyi Wu, Ya-De Tian, Wei-Han Wang, Wen-Jeng Ho, and Tian-Tsorng Shi, “Effects of rapid thermal annealing on InAsP/InP strained multiquantum well laser diodes grown by metal organic chemical vapour deposition,” Electron. Lett., Vol. 36, No. 12, pp. 1026-1028, 2000. (SCI)
  71. A.K. Chu, K.M. Lee, B.J. Pong, C.J. Lin,  W.J. Hoand T.T. Shih, “Hybrid polyimide/Ta2O5/polyimide antiresonant reflecting optical waveguides,” Electron. Lett., Vol. 36, No. 18, pp. 1539-1540, 2000. (SCI)
  72. C.L. Ho, M.C. Wu, W.J. Ho and J.-W. Liaw, “Comparison between planar InP/InGaAs/InP pin photodiodes with symmetrical and asymmetrical doping profiles,” IEE Proc., Optoelectron., Vol. 147, No. 2, pp. 109-113, 2000. (SCI)
  73. Chong-Long Ho, Meng-Chyi Wu, Wen-Jeng Ho, Jy-Wang Liaw, Hai-Lin Wang, “Effectiveness of the pseudowindow for edge-coupled InP-InGaAs-InP PIN photodiodes,” IEEE Journal of Quantum Electronics, Vol. 36,  No. 3, pp. 333-339, 2000. (SCI)
  74. Chong-Long Ho, Meng-Chyi Wu, Wen-Jeng Ho, Jy-Wang Liaw, “Edge- coupled InGaAs P-I-N photodiode with a pseudowindow,”IEEE Transactions on Electron Devices, Vol. 47,  No. 11, pp. 2088-2092, 2000. (SCI)
  75. C. Y. Lee, M. C. Wu, H. P. Shiao, T. T. Shi, and W. J. Ho, “MOCVD growth of strained multiple quantum well structure for 1.3um InAsP/InP laser diodes,” Solid-State Electron., Vol. 43, pp. 2141-2146, 1999. (SCI)
  76. C. L. Ho, W. J. Ho, M. C. Wu, and J. W. Liaw, “Comparison of InGaA p-i-n photodiodes with Ti/Pt/Au and Au reflectors,” Electron. Lett., Vol. 35, pp. 1767-1768, 1999. (SCI)
  77. C. L. Ho, M. C. Wu, W. J. Ho, and J. W. Liaw, “ GaAs MESFET with low current capability grafted onto quartz substrate,” IEE Proc. Circuits Devices Syst., Vol. 46, No. 3, pp. 135-138, 1999. (SCI)
  78. C. L. Ho, M. C. Wu, W. J. Ho, and J. W. Liaw, “Light induced negative differential resistance in planar InP/InGaAs/InP double heterojunction PIN photodiode,” Appl. Phys. Lett., Vol. 74, pp. 4008-4010, 1999. (SCI)
  79. C. L. Ho, M. C. Wu, W. J. Ho, and J. W. Liaw, “Bandwidth enhancement for p-end-illuminated  InP/InGaAs/InP PIN photodiodes by utilizing symmetrical doping profiles,”  J. Lightwave Technol.Vol. 17, pp. 912-917, 1999. (SCI)
  80. L. C. ChenW. J. Hoand M. C. Wu, “Growth and characterization of high-quality InAs0.86Sb0.05P0.09 alloy by liquid-phase epitaxy,” Jpn. J. Appl. Phys., Vol. 38, pp. 1314-1316, 1999. (SCI)
  81. C. L. Ho, M. C. Wu, W. J. Ho, and J. W. Liaw, “Effectiveness of metallic mirror for promoting the photoresponse of InGaAs PIN photodiodes,” Solid-state Electron., Vol. 43, pp. 961-967, 1999. (SCI)
  82. W. J. HoM. C. Wu, and Y. K. Tu, “Fabrication and characterization of high-performance planar InGaAs/InP separate absorption, grading, and multiplication avalanche photodectors,” Solid-State Electron., Vol. 43, No. 3, pp. 659-663, 1999. (SCI)
  83. P. S. Chang, M. T. Cheng, M. L. Chu, Y. C. Liu, P. K. Teng, H. L. Chang, W. J. Ho, C. J. Hwang, T. T. Shi, Y. K. Tu, and C. Wang, “Dense optical interface modules for silicon detector readout,” Nuclear Physics B (Proc. Suppl.), Vol. 61, No. 3, pp. 360-365, 1998.(SCI)
  84. L. C. Chen, M. C. Wu, and W. J. Ho, “Thermal properties of InAs0.86Sb0.05P0.09 homostructure diodes,” Jpn. J. Appl. Phys., Vol. 37, pp. 5622-5624, 1998. (SCI)
  85. W. J. Ho, M. C. Wu, and Y. K. Tu, “Performance of monolithically integrated 1x12 array of planar GaInAs photodiodes,” IEEE Trans. on Electron Devices  ED-44, pp. 559-564, 1997. (SCI)
  86. W. J. Ho, M. C. Wu, T. A. Dai, W. Lin, and Y. K. Tu, "Highly uniform monolithic 1 x 12 array of InGaAs photodiodes," Electron. Lett., Vol. 32, pp. 61-62 , 1996. (SCI)
  87. T. A. Dai, Z. M. Chuang, C.Y. Wang, W. J. Ho, W. Lin, and Y. K. Tu, “Impedance calculation and frequency response analysis of planar InGaAs/InP photodiodes,” Journal of Chinese Institute of Electrical Engineering, Vol. 2, No. 2, pp. 99-106, 1995. (EI)
  88. W. J. Ho, M. C. Wu, Y. K. Tu, and H. H. Shih, "High responsivity GaInAs PIN photodiode by using erbium gettering," IEEE Trans. on Electron Devices ED-42, pp. 639-645, 1995. (SCI)
  89. W. J. Ho, T. A. Dai, Z. M. Chung, W. Lin, Y. K. Tu, and M. C. Wu, "InGaAs PIN photodiodes on semi-insulating InP substrates with bandwidth exceeding 14 GHz," Solid-State Electron., Vol. 38, pp. 1295-1298, 1995. (SCI)
  90. W. J. Ho, H.H. Shih, T.A. Dai, J.G. Chen, Z.M. Chuang, C.C. Lin, and W. Lin, “High speed planar structure InGaAs p-i-n photodetector,” TL Technical Journal, Vol. 24, No. 6, pp.779-786, 1994.
  91. W. J. Ho, M. C. Wu, Y. M. Lin, and Y. K. Tu, "InGaAs PIN photodiodes grown by liquid-phase epitaxy using erbium gettering,"Electron. Lett., Vol. 30, pp. 83-84, 1994. (SCI)
  92. Wei Lin, C.Y. Chang, Y.K. Tu, T.A. Dai, W.J. Ho, G.Y. Lee, T.T. Shi and H.P. Shiao, “Low threshold 1.5 mm quantum well lasers with continuous linear-graded-index InGaAsP layers prepared by organometallic vapor-phase epitaxy,” Appl. Phys. Lett., Vol. 62, no. 11, pp. 1239-1241, 1993. (SCI)
  93. W.J. Ho, T.A. Dai, W. Lin, and L. Chen, “Fabrication of double-heterostructure planar-type In0.53Ga0.47As/InP p-i-n photodetector,”TL Technical Journal, Vol. 22, No. 4, pp. 515-524, 1992.
  94. Wei Lin, Y.K. Tu, T.A. Dai, W.J. Ho, G.Y. Lee, and H.P. Shiao, “The InxGa1-xAsyP1-y (0.53<x<1, 0<y<1) compound semiconductor for LD Structures by organometallic vapor-phase epitaxy,” J Cryst. Growth, Vol. 123, pp. 451-458, 1992.(SCI)

 

 

 

 International Conference Papers

  1. Wen-Jeng Ho, Yi-Yu Lee, Jheng-Jie Liu, Chi-He Lin, Yung-Ching Chiu, and Hung-Pin Shiao, “Improved the Current Matching of the Middle Cell Current-Limited Triple-Junction GaAs/Ge Solar Cells After Epitaxial Grown Using Matrix Profile TiO2 Layer and Indium Nanoparticles Plasmonics,” 39th IEEE Photovoltaic Specialists Conference, (PVSC 2013). (Accepted)
  2. Wen-Jeng Ho, Yi-Yu Lee, Jheng-Jie Liu, Yuan-Tsz Chen, Chi-He Lin, Po-Hung Tsai, “Performance Enhanced of Silicon Solar Cells Using Spin-On-Film Processes and Indium Nanoparticles Plasmonics,” (CLEO-2013), June 9-14, 2013. (Accepted)
  3. W.J. Ho, C.H. Lin, Y.-Y. Lee, H.-P. Shiao, C.F. Lin, “Additional Increasing in 0.54% Efficiency for Triple-Junction GaAs-Based Solar Cells with DL-ARC Using Periodic Patterns Indium Nanoparticles Plasmonics Light Scattering,” 28th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2013). (Accepted)
  4. Jia-Ying Wu, Wen-Jeng Ho, Jheng-Jie Liu, Yuan-Tsz Chen, Yi-Yu Lee, Min-Chun Huang, Po-Hung Tsai, Chi-He Lin, and Po-Yueh Cheng, “Performance Enhancement of a Biasing-ITO-AR-Electrode MOS-Structure Silicon Solar Cells,” (CLEO-PR & OECC/PS 2013), June 30 - July 4, 2013. (Accepted)
  5. Wen Jeng Ho, Yi-Yu Lee, Yuan Tsz Chen, “Characterization of Plasmonic Silicon Solar Cells Using Indium Nanoparticles/TiO2 Space Layer Structure,” International Conference on Applied Materials and Electronics Engineering (AMEE 2013), Hong Kong, April 19-20, 2013.
  6. Chi-He Lin, Wen-Jeng HoYi-Yu Lee, Jheng-Jie Liu, Po-Hung Tsai, and Yu-Peng Chang, “Additional Efficiency Enhanced for DL-ARC Triple-Junction GaAs/Ge Solar Cells Based on Indium Nanoparticles Surface Plasmon Light Scattering,” Progress In Electromagnetics Research Symposium (PIERS) 2013, pp. 680-684, Tainan, Taiwan, March 25-28, 2013.
  7. Yu-Peng Chang, Wen-Jeng Ho, Jhe-Min Lin, Peng-Chun Peng, and Hai-Han Lu, “Transmitted Characterization of 625 Mbps/15 GHz ROF Signal Using a Direct Modulated Baseband Signal and Twice Optical Carrier Suppression Modulation,” Progress In Electromagnetics Research Symposium (PIERS) Proceedings, pp. 528-531, Taipei, March 25-28, 2013.
  8. Wen-Jeng Ho, Yi-Yu Lee, Jia-Ying Wu, “Fabrication of plasmonics Si solar cells based on indium nanoparticles and TiO2 space layer,” The 2nd International Symposium on Next-Generation Electronics (ISNE 2013), pp. 417-419, Kaohsiung, Taiwan, Feb. 25-26, 2013.
  9. Jheng-Jie Liu, Wen-Jeng Ho, Jhih-Kai Syu, Yi-Yu Lee, Ching-Fuh Lin, and Hung-Pin Shiao, “Current Matched Improving of Triple-Junctions GaAs-Based Solar Cell using Periodic Patterns Incorporated with Indium Nanoparticle Plasmonics,” IEEE International Nanoelectronics Conference (INEC 2013), pp. 511-513, Resorts World Sentosa, Singapore, Jan. 2-4, 2013.
  10. Yi-Yu Lee, Wen-Jeng Ho, Cheng-Ming Yu, Jheng-Jie Liu, Ching-Fuh Lin, and Hung-Pin Shiao, “Performance Improvement of Triple-Junctions GaAs-Based Solar Cell using SiO2-Nanopillars/SiO2/TiO2 Graded-Index Anti-Reflection Coating,” IEEE International Nanoelectronics Conference (INEC 2013), pp. 452-454, Resorts World Sentosa, Singapore, Jan. 2-4, 2013.
  11. Yi-Chia Hsieh, Wen-Jeng Ho, and Jheng-Jie Liu, “Dark Counts Suppression Based on Balanced Dual-APD Scheme for QKD System,” Optics and Photonics Taiwan,International Conference (OPTIC 2012), PB-TH-I-(1)-8, Tainan, Taiwan, Dec. 6-8, 2012.
  12. J. Y. Wu, W. J. Ho, Q. R. Lai, Y.Y. Li, J. J. Liu, “Study of Field-Aided Effect in MOS-Structure n-on-p Silicon Solar Cell,” Optics and Photonics Taiwan,International Conference (OPTIC 2012), PI-FR-I-(4)-7, Tainan, Taiwan, Dec. 6-8, 2012.
  13. Chun-Chin Liao, Wen-Jeng Ho, Jhih-Kai Syu, Jheng-Jie Liu, Yi-Yu Lee, Shu-Chia Shiu, and Ching-Fuh Lin, “Fabrication of Oblique Silica Nano-rods Subwavelength Anti-reflection Structures to Enhance Performances of Silicon Solar Cell,” Optics and Photonics Taiwan,International Conference (OPTIC 2012), PA-FR-I-(3)-6, Tainan, Taiwan, Dec. 6-8, 2012.
  14. Cheng-Ming Yu, Wen-Jeng Ho, Yi-Yu Lee, Jheng-Jie Liu, Chin-Cing Liao, Wei-Ting Wang, Shu-Chia Shiu, Ching-Fuh Lin and Hung-Bin Shiau, “Photovoltaic Performances Enhanced by Novel Indium Nanoparticles Using Surface Plasmonic in GaAs-Based 3-Junction Solar Cells,” Submitted to IEEE PVSC 2012 (ID: #409).
  15. Wen-Jeng Ho, Jhih-Kai Syu, Cheng-Ming Yu, Yi-Yu Lee, Jheng-Jie Liu, Shu-Chia Shiu, Ching-Fuh Lin and Hung-Bin Shiau "EQE Enhancement of Top-Cell of GaAs-Based Triple-Junction Solar Cell Using Graded-Index SiO2 Nano-Pillars Sub-Wavelength AR-Coating," Submitted to CLEO-2012 (ID: 1303999).
  16. Wen-Jeng HoQuan-Ru Lai, Jheng-Jie Liu, Yi-Yu Lee, and "Demonstration of the Efficiency Enhanced by Induced Electrical Field in Silicon MOS-Structure Solar Cells," Submitted to CLEO-2012 (ID: 1297595).
  17. Wen-Jeng Ho, Shih-Hao Ou, Jheng-Jie Liu, Yi-Yu Li, Jhih-Kai Syu, Quan-Ru Lai, and Cheng-Ming Yu, “Spin-on Phosphorus Film Technology for High Efficency Single Crystal Silicon Solar Cells,” International Photonics Conference (IPC-2011), PI-TH-12, Tainan, Taiwan, Dec. 8-10, 2011.
  18. Jheng-Jie Liu, Wen-Jeng Ho*, Yi-Chia Hsieh,“High Multiplication Gain of InGaAs/InP APDs Using Hetero-Multiplication Region and Novel Single-Diffusion Device Process,” First International Conference on Engineering and Technology Innovation 2011 (ICETI2011)Paper No. D1040, Kenting, Taiwan, November 11-15, 2011. (Accepted)
  19. Wen-Jeng Ho*, Shih-Hao Ou, Yi-Yu Lee, and Jheng-Jie Liu, “Broadband Wavelength and Wide-Acceptance Angle of SiO2 Sub-Wavelength Surface Structure for Solar Cells Using CF4 RIE Etching,” TACT 2011 International Thin Films ConferencePaper C20110616001, Kenting, Taiwan, November 20-23, 2011. (Accepted)
  20. Wen-Jeng Ho*, Ming-Li Hsieh, Yi-Yu Lee, Jheng-Jie Liu, Jhih-Kai Syu, Quan-Ru Lai, and Cheng-Ming Yu, “Efficiency Improvement of 18.9% Using a Voltage Biasing Transparent Electrode for MIS Transistor-Based Silicon Solar Cells,” TACT 2011 International Thin Films ConferencePaper F20110620011, Kenting, Taiwan, November 20-23, 2011. (Accepted)
  21. Jheng-Jie Liou, Wen-Jeng Ho, Jhe-Min Lin, Yi-Chia Hsieh, Hsuan-Ming Tang, and Yu-Feng Yang, “Generation and Transmission Characterization of Sub-picoseconds 1550 nm Optical RZ-pulse,” Progress In Electromagnetics Research Symposium 2011 (PIERS 2011), Paper 3A7-4, Suzhou, CHINASeptember 12-16, 2011. [http:www.pirs.org/pirs2011Suzhou/programfinal.php]Yi-Yu Lee, Wen-Jeng Ho, Jhih-Kai Syu, Quan-Ru Lai, and Cheng-Ming Yu, “17.9% Efficiency Silicon Solar Cells by Using Spin-on Films Processes,” Progress In Electromagnetics Research Symposium 2011 (PIERS 2011), Paper 2P7-34, Suzhou, CHINASeptember 12-16, 2011. [http:www.pirs.org/ pirs2011Suzhou/programfinal.php]
  22. Jhe-Min Lin, Wen-Jeng Ho, and Chih-Yung Li, “Dynamic Characterization of EDFA Based on ASE Selective-feedback and Gain-clamping Techniques,” Progress In Electromagnetics Research Symposium 2011 (PIERS 2011), Paper 3A7-3,  Suzhou, CHINASeptember 12-16, 2011. [http:www.pirs.org/pirs2011 Suzhou/programfinal.php]
  23. Wen-Jeng Ho, Jheng-Jie Liu , Jhe-Min Lin, Yi-Yu LeeYi-Chia Hsieh, and Hsuan-Ming Tang,“Reducing in Dark Count Rate Using a Dual-APDs Balanced-Capacitance Self-Differencing Scheme for 1550 nm Single Photon Detection Applications,” Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR:2011), Paper 830.00, Sydney, Australia, 28 August to 1 September, 2011. [http:www.iqec-cleopr2011.com]
  24. Wen-Jeng Ho, Jheng-Jie Liu, Jhe-Min. Lin, Yi-Yu Lee, Hsuan-Ming Tang and Yi-Chia Hsieh, “Performance Characterization of 1550-nm Single Photons Detector Using a Novel Scheme of Balanced Dual APD and Self-Differencing Circuit,”The 16th Opto-Electronics and Communications Conference (OECC:2011), Paper 7P3_084, Kaohsiung, Taiwan, July 4-8, 2011. [http:www.oecc2011.org]
  25. Wen-Jeng Ho, Yi-Yu Lee, Ming-Li Hsieh, Yuan-Li Chen, Shu-Chia Shiuand Ching-Fuh Lin, "Efficiency Enhancement of 31% of Silicon Solar Cells Using Spin-on Phosphorus Diffusion, Indium Nanoparticles, and Spin-on TiO2 Space Layer," The 16th Opto-Electronics and Communications Conference (OECC:2011), Paper 6F1_2, Kaohsiung, Taiwan, July 4-8, 2011. [http:www.oecc2011.org]
  26. Wen-Jeng Ho, Yi-Jen Lin, L. Y. Chien, Yi-Yu Lee, Yuan-Li Chen, Cheng-Ming Yu, Quan-Ru Lai, Jhih-Kai Syu and H. P. Shiau, "25.54% Efficient Single-Junction GaAs Solar Cells Using Spin-On-Film Graded-Index TiO2/SiO2 AR-Coating," Conference on Lasers and Electro-Optics (CLEO:2011), Paper JWA74, Baltimore, Maryland, USA, May 1-6, 2011. [http:www.cleoconference.org]
  27. Wen-Jeng Ho, Jheng-Jie Liu, Shih-Hao Ou, Cheng-Ju Chen and Hsuan-Ming Tang, “Fabrication and performance characterization of 1550 nm heteromultiplication avalanche photodiodes for single photons detection,” SPIE Photonics West 2011Optical Components and Materials VIII, Paper 7934-49, San Francisco, California, USA, 22-27 January 2011. [http:www.spie.org/pw]
  28. Chi-Ming Yen, Wen-Jeng Ho, Yi-Yu Li, “Spin-on Phosphorus Film Technology for High Efficency Single Crystal Silicon Solar Cells,” International Conference on Optics and Photonics (OPT-2010) in Tainan, OPT9-P-001, Dec. 3-4, 2010. (ISBN 978-986-6975-39-4)
  29. Ming-Li Xie, Wen-Jeng Ho, “Surface Plasmon of Indium Nanoparticles Enhanced Silicon Solar Cells,” International Conference on Optics and Photonics (OPT-2010) in Tainan, OPT9-P-005, Dec. 3-4, 2010. (ISBN 978-986-6975-39-4)
  30. Yi-Jen Lin, Wen-Jeng Ho, Shih-Hao Ou, Yi-Yu Li, Hung-Pin Shiao, Kuang-Yueh Tsai, “23.93% Efficient Single-junction GaAs Solar Cell based on Graded Index TiO2 Double-layer ARCs,” International Conference on Optics and Photonics (OPT-2010) in Tainan, OPT1-P-018, Dec. 3-4, 2010. (ISBN 978-986-6975-39-4)
  31. Liang-Yin Chien, Wen-Jeng Ho , Yi-Jen Lin“Analysis of p-InP Schottky Solar Cell Using a Gold Metallization,” International Conference on Optics and Photonics (OPT-2010) in Tainan, OPT1-P-019, Dec. 3-4, 2010. (ISBN 978-986-6975-39-4)
  32. Chien-Fu Lai, Wen-Jeng Ho, Ming-Li Xie, “Surface Plasma Effect and Optical Property of Indium Nanoparticles,” International Conference on Optics and Photonics (OPT-2010) in Tainan, OPT1-P-085, Dec. 3-4, 2010. (.ISBN 978-986-6975-39-4)
  33. Yu-Siang Huang, Ching-Hung Chang, Wen-Yi Lin, Wen-Jeng Ho, and Hai-Han Lu, “10Gb/s Bidirectional Long Reach WDM-PON with Dispersion Compensating Raman/EDFA Hybrid Amplifier and Colorless ONUs,” The 15th OptoElectronics and Communications Conference 2010 (OECC:2010) in Sapporo Japan, July 6, 2010.
  34. Wen-Jeng Ho, Jheng-Jie Liu, and Cheng-Ju Chen, “Characterization of InP Based SAGCM Avalanche Photodetector for Single Photon Fiber Optic Communications,” Progress In Electromagnetics Research Symposium 2010 (PIERS 2010) in Xi'an, Session 4AP-74, Mar. 25, 2010.
  35. Bing-Yi Lin Wen-Jeng Ho, “Single-Mode Optical Pulse Inducing by Self-Injection Locking and RF Gain-Switching 1550 nm Fabry-Port Laser Diode,” International Conference on Optics and Photonics (OPT’08) in Taipei-2008, P. 118, Fri-P1-163, 2008.
  36. W. I. Lin, H. H. Lu, Wen-Jeng Ho, P. C. Lai, and H. Yee, “Employing Photonic Crystal Fiber to improve CSO/CTB Performances in a Two-Wavelength WDM Transport System,” CLEO/Pacific Rim’07, ThP-144, Seoul, Republic of Korea, August 26-31, 2007.
  37. W. I. Lin, H. H. Lu, Wen-Jeng Ho, P. C. Lai, and H. Yee, “Employing Fabry-Perot Etalon in Full-Duplex Radio-on-Fiber Transport System, ”CLEO/Pacific Rim’07, WD2-5, Seoul, Republic of Korea, August 26-31, 2007.
  38. H. H. Lu, W. I. Lin, Y. W. Chuang, S. J. Tzeng, Wen-Jeng Ho, “Employing VCSEL Injection-Locked and Optoelectronic Feedback Techniques to Setup a Bidirectional Radio-on-DWDM Transport, ” OFC/NFOEC 2007, JWA61, March, 2007.
  39. San-Liang Lee, Chiu-Lin Yao, Ing-Fa Jang, Chia-Chien Lin, and Wen-Jeng Ho, “Wavelength Selectable Lasers with Bragg-Wavelength Detuned Sampled-Grating Reflectors,” CLEO 2005, paper CThA6. (2005).
  40. Hsiang-Szu Chang, Wen-Yen Chen, Wen-Hao Chang, Tzu Min Hsu, Nien-Tze Yeh, Wen-Jeng HoPei-Chin Chiu, and Jen-Inn Chyi, “Growth of low density InGaAs quantum dot for single photon source by metal-organic chemical vapor deposition”, ISCS 2005, Sep. 18-19, Germany, 2005.
  41. T.-P. Hsieh, H.-S. Chang, W.-Y. Chen, W.-H. Chang, T. M. Hsu, N.-T. Yeh, W.-J. Ho, P.-C. Chiu, and J.-I. Chyi, “Growth of Low-Density InGaAs Quantum Dot for Single Photon Source by Metal-Organic Chemical Vapor Deposition”, Intl. Symposium on Compound Semiconductors (ISCS), Rust, Germany, 2005.
  42. N. -T. Yeh, P. -C. Chiu, C. C Hong, T. -P. Hsieh, Y. T. Tsai, W.-J. Ho, and J. -I. Chyi, “InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth” 17th International Conference on Indium Phosphide and Related Materials, IPRM’05, 8-12 May 2005, Page(s):374 - 377Glasgow, Scotland, 2005.
  43. Chao-Chi Hong, Hai-Lin Wang, Hung-Huei Liao, and Wen-Jeng Ho, “250Mbps InGaP 650nm RCLED,” International Conference on Electron Devices and Materials Symposia, 2004.
  44. Y. H. Huang, C. L. Ho, C. J. Lin, M. I. Liu, C. C. Yang, G. C. Lin, D. J. Pong, W. J. Ho, J. W. Liaw, and M. C. Wu, “Ball-Lens Socket Integrated 10Gbps InGaAs P-I-N Photodiode”, International Conference on IEEE Photonics 2004.
  45. San-Liang Lee; Chih-Jen Wang; Pei-Ling Jiang; Chiu-Lin Yao; Chia-Chien Lin; Wen-Jeng Ho, “Tunable two-section shift-layer DFB lasers and wavelength converters”, Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International, Page(s):77 – 78, 2004.
  46. P. C. Chiu, N. T. Yeh, T. P. Hsieh, W.-J. Ho, and J. I. Chyi, “Optical Quality Improvement of InGaAsN/GaAs Quantum Well with Reduced Al-Contamination by Interrupted with Dimethylhydrazine (DMHy)”, International Symposium on Compound Semiconductors, Seoul, Korea, 2004.
  47. T. P. Hsieh, N. T. Yeh, P. C. Chiu, W.J. Ho and J.I. Chyi, “1.55 mm Emission from InAs Quantum Dots Grown on GaAs” 12th International Conference on Metal Organic Vapor Phase Epitaxy, ICMOVPE XII, Maui, Hawaii, 2004.
  48. W. Liang, Kong-Thon F. Tsen, Meng-Chyi Wu, Chong-Long Ho and Wen-Jeng Ho, “Large electric-field induced electron drift velocity observed in InGaAs- based p-i-n semiconductor nanostructure”, Proc. SPIE Int. Opt. Eng. 4992, 265 – 270 (2003).
  49. W. Liang, Kong-Thon F. Tsen, Otto F. Sankey, Sergiy M. Komirenko, Ki Wook Kim, Viatcheslav A. Kochelap, Meng-Chyi Wu, Chong-Long Ho, Wen-Jeng Ho, and Hadis Morkoc,“Observation of field-induced optical phonon amplification in semiconductor  nanostructures”, Proc. SPIE Int. Soc. Opt. Eng. 4992, 174-187 (2003).
  50. T. P. Hsieh, P. C. Chiu, Y. C. Liu, N. T. Yeh, W. J. Ho and J. -I. Chyi, “Selective Growth of InAs Quantum Dots on Patterned GaAs Substrate by Metal-Organic Chemical Vapor Deposition”, International Symposium on Compound Semiconductors, on 25-27 Aug. 2003 Page(s):97 – 98, San Diego, California, 2003.
  51. N.T. Yeh, T. P. Hsieh, P.C. Chiu, K. -F. Huang, W. J. Ho, M. -C. Wu, and J. -I. Chyi, “1.3 to 1.5 mm range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition” 15th International Conference on Indium Phosphide and Related Materials, IPRM’03, Santa Barbara, California, 2003.
  52. N.T. Yeh, K. F. Huang, T. P. Hsieh, W. J. Ho, J. I. Chyi and M. C. Wu, “1.3 μm InAs/GaAs Quantum Dots directly Capped with GaAs Grown by Metal-Organic Chemical Vapor Deposition”, Materials Research Society (MRS) Spring Meeting, San Francisco, California, 2003.
  53. N.T. Yeh, B.R. Wu, W.J. Ho, and J.-I. Chyi “Improved performance of InGaAsN/GaAs Lasers with Low Temperature Grown Quantum Well by MOCVD”, Indium Phosphide and Related Materials, IPRM’02, Stockholm, Sweden, 2002.
  54. B. -R. Wu, K. -F. Huang, N. -T. Yeh and W. J. HoMutually exclusive behavior of In and N atom in highly strained GaInNAs/GaAs quantum wells by MOCVD”, Lasers and Electro-Optics 2002. CLEO '02, Long Beach, California, 2002.
  55. R. H. Horng, D. S. Wuu, W. C. Peng, W. H. Ho, Y. S. Huang, “Opticalelectrical Device Bonded to Metal-Mirror Substrate”, 10 th Canadian Semiconductor Technology Conference, Ottawa, Canada, Aug. 13-17,(2001).
  56. Ing-Fa Jang; San-Liang Lee; Chi-Yu Wang; Lih-Wen Lai; Wen-Jeng Ho, “Integrated DWDM laser arrays with stable and high-SMSR wavelengths”, Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on Volume 2, Page(s):II-52 - II-53 vol.2, 15-19 July 2001.
  57. Yi-Shin Su, Chinh-Fuh Lin, Bing-Ruey Wu, Lih-Wen Laih and Wen-Jeng Ho, “Broadband Tunability of External-Cavity Semiconductor Lasers for Optical Communication,” Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE , vol. 2, pp.546-547, (2001).
  58. L. H.  Laih, L. W.  Laih, W. J. Ho, and Y. K. Tu, “850 nm VCSEL with transparent thin metal and ITO film” , Progress In Electromagnetics Research Symposium , PIERS-2001, (2001).
  59. W. C. Peng,, R. H. Horng, D. S. Wuu, T. T. Shih,  W. H. Ho, Y. S. Huang,“1.3/1.5-um VCSEL bonded to metal-mirror substrates”, International Phontonics Conf., Taiwan, Dec. 12-15, 2000, pp. 316-318, (2000).
  60. R. H. Horng, W. C. Peng, D. S. Wuu, T. T. Shih,  W. H. Ho, Y. S. Huang, “Surface treatment and electrical properties of directly bonded InP on GaAs ”, in Proc. IEDMSTaiwan, Dec. 20-21, 2000,  PP. 122-125, (2000).
  61. D. J. Pong, C. L. Ho, M. Y. Wu, C. D. Yang, W. J. Ho, and M. C. Wu, “High-speed 1.55-um AlGaInAs ridge-waveguide semiconductor laser diode” in Proc. IEDMSTaiwan (2000).
  62. C. L. Ho, W. J. Ho, M. C. Wu, and D. J. Pong “Edge-coupled InGaAs P-I-N photodiode with a pseudowindow defined by etching process” in Proc.  IEDMS’ B-2, pp. 31-33 (2000).
  63. C. L. Ho, W. J. Ho, M. C. Wu, and J. W. Liaw “High-speed planar InP/InGaAs/InP p-I-n photodiode with bandwidth exceeding 16 GHz”,  in Proc. IEDMS , D4-8, pp. 423-426 (1999).
  64. T.T. Shih, W .J. Ho, H.H. Shih, “9-element Optical Parallel Transmission Modules for Fiber-To-The-Home and Data-Link Applications”, in Proc. International Telecommunications Symposium (1998).
  65. W. J. Ho, Z. S. Lin, D. C. Lin, W. H. Wang, S. C. Ko, Y. H. Huang, H. L. Wang, T. T. Shih, J. W. Liaw, and M. C. Wu, “High performance planar InGaAs/InP avalanche photodetectors with gain-bandwidth exceeding 45GHz”, in Proc. IEDMS (1998).
  66. W. Lin, H. P. Shiao, W. H .Lin, C. C. Lin, H. H .Shih, J. Y. Su, H. L. Wang, S. C. Ko, C. Y. Wang, T. T. Shi, W. J. Ho, Y. H. Lo, and Y. Qian, Excellent gain quality of InGaAlAs/InP strain-compensated multiple quantum wells grown by MOVPE for VCSELs, in Proc. IEDMS. (1997).
  67. T. Y. Dai, W. J. Ho, W. Lin, Y. K. Tu, and M. C. Wu, "Planar InGaAs/InP avalanche photodiodes with gain-bandwidth product of 10 GHz" in Proc. IEDMS (1996).
  68. W. J. Ho, S. H. Denq, and M. C. Wu, "High Responsivity GaInAs PIN Photodiodes by Using Erbium Gettering," in Proc. EDMS (1995). (Zuon-Min Chuang; Ting-Arn Dai; Wen-Jeng Ho; Jian Guang Chen; Hung-Hui Shih; Wei Lin; Yuan-Kuang Tu,“Low capacitance, front-illuminated planar InGaAs PIN photodiode on semi-insulating InP substrate,” International Electron Devices and Materials Symposium, (IEDMS’94) , Page(s):11-7-25 - 11-7-28,  12-15 July (1994).
  69. Wen-Jeng Ho, Yuan-Kuang Tu, Wei Lin, Hung-Hui Shih, Ting-Arn Dai, Meng-Chyi Wu, “Fabrication and characterization of LPE-grown, erbium-doped InGaAs pin photodiodes,” International  Electron Devices and Materials Symposium (IEDMS’94), Page(s):11-9-32 - 11-9-35, 12-15 July(1994).
  70. W. J. Ho, Y. K. Tu, W. Lin, H. H. Shih, T. A. Dai, and M. C. Wu, "Fabrication and characterizaton of LPE-grown, erbium-doped InGaAs PIN photodiodes", in Proc. EDMS (1993).
  71. Wei Lin, Yuan-Kuang Tu, Ting-Arn Dai, Wen-Jeng Ho Chuan-Yang Chang, and Gwo-Yue Lee,“InxGa1-xAsyP1-y (0.53<x<1, 0<y<1) compound semiconductor for laser diode structures by organometallic vapor-phase epitaxy,” Proc. SPIE, 1813, pp. 213-220 (1992).
  72.  

 

Domestic Conference Papers  
  1. 邱詠清, 何文章許智凱, 劉政杰, 李奕攸, “斜向二氧化矽奈米柱/二氧化矽/二氧化鈦漸變折射率之抗反射層的製作與量測,” 2012年光電與通訊工程研討會, 高雄市, 台灣, Oct. 26, 2012.
  2. 唐萱銘, 何文章劉政杰, 邱詠清, “砷化銦鎵檢光二極體製作及SU-8光纖孔洞技術建購單模光纖被動對準之研究,” 2012年光電與通訊工程研討會, 高雄市, 台灣, Oct. 26, 2012.
  3. Ching-Hsiang Chang, Wen-Jeng Ho and Yi-Yu lee, “Investigation of solar cells efficiency enhamcement using a TiO2 AR-coating sphere surface structure,”9th Conference on Microelectronics Technology and Applications, pp. 21-22, May 20, 2011. (ISBN 986027755-9)
  4. Shih-Hao Ou , Wen-Jeng Ho , Yi-You Li , Shu-Chia Shiu, Ching-Fuh Lin, “Fabrication of broadband antireflection nanostructure for silicon solar cells using reactive ion etching,”Annual Meeting of the Physical Society of Republic of China, in Taipei, AP-008, p.85, Jan. 25-27, 2011.
  5. Cheng-Ju Chen, Wen-Jeng Ho, Jheng-Jie Liu, Yi-Chia Hsieh, “Basic QKD Transmission System Based on Single Photon Detection Structure Using Self-Differencing Circuit,” National Symposium on Telecommunications-2010 (NST-2010), in Taoyuan, P1-7, 487, Dec. 3-4, 2010.
  6. Yu-Feng Yang, Wen-Jeng Ho, Jhe-Min Lin, “Optical Pulse Transmission Characterization by Using Fiber-Ring Self-Injection Locking and Gain- Switching Distribution Feedback Laser,” National Symposium on Telecommunications-2010 (NST-2010), in Taoyuan, F2-3, 488, Dec. 3-4, 2010.
  7. Yuan-Li Chen, Wen-Jeng Ho, Chien-Fu Lai, “18.4% Efficiency Enhanced of Si Solar Cell by Using Surface Plasmonics Indium Nanoparticles,” 2010 Taiwan Vacuum Society 2010, No. 047, pp. 58, Tainan, Taiwan ROC, Oct. 29, 2010.
  8. Chi-Luen Lin, Wen-Jeng Ho, Ching-Hsiang Chang, Yi-You Li, “Efficiency Enhancement of Solar Cell by Sub-Micron Structure Anti-Reflection Coating,” 2010 Taiwan Vacuum Society, No. 049, pp. 60, Tainan, Taiwan ROC, Oct. 29, 2010.
  9. 賴建甫何文章謝明利鄧伊竣自組式奈米銦粒子光學特性與表面電漿效應之探討,” 2010台灣真空學會No. 056, pp. 67, Tainan, Taiwan ROC, Oct. 29, 2010.
  10. Chi-Luen Lin, Wen-Jeng Ho, “Enhancement of Si Solar Cell Efficiency by Self-Assembly Monolayer SiO2 Microspheres,” 2010 Intelligent Systems Conference on Engineering ApplicationsC2-1, pp. 201-204, Tainan, Taiwan ROC, May 6, 2010.
  11. Chi-Ming Yen, Wen-Jeng Ho, “Development of Spin-Coating Phosphorus Diffusion and Characterization of a Thermal Diffused n+-p Si Solar Cells,” 2010 Intelligent Systems Conference on Engineering ApplicationsC2-3, pp. 211-213, Tainan, Taiwan ROC, May 6, 2010.
  12. Yan-Ying Jhu, Wen-Jeng Ho, “Fabrication and Characterization of the bottom Si-cell in the GaAs/Si two-junction solar cell,” 2010 The Physical Society of Republic of China, EP-095, Tainan, Taiwan ROC, Feb. 3, 2010.
  13. 何文章甯書煜周育正朱彥穎, “以銦薄膜進行GaAs/Si太陽能電池晶圓接合及對底層矽太陽能電池之影響探討,” OPT- 2009, pp. 141 (IP-032), Taipei, Taiwan ROC, Dec. 11-12, 2009.
  14. W. J. Ho , C. H. Chiu(邱建閎), J. J. Liou, Y. B. Chen, and C. J. Chen,“Dark Current and Dark Count of InP Based SAGCM Single Photon Avalanche Detector Base on Activation Energy Analysis,” OPT- 2009, pp. 46 (AO-239), Taipei, Taiwan ROC , Dec. 11-12, 2009.
  15. 楊育峰何文章呂海涵,“利用Gain-SwitchingInjection-Locking技術之脈衝光源在頻域及時域特性受溫度影響之探討,” OPT- 2009, pp. 101 (BP-026), Taipei, Taiwan ROC, Dec. 11-12, 2009.
  16. 鍾昕展何文章,“銦薄膜透明電極的形成與在III-V族太陽能電池之應用,” OPT- 2009, pp. 140 (IP-023), Taipei, Taiwan ROC, Dec. 11-12, 2009.
  17. 陳政儒何文章劉政杰,“光通訊用單光子InP/InGaAs雪崩檢光二極體特性分析,” OPT- 2009, pp. 100 (BP-015), Taipei, Taiwan ROC, Dec. 11-12, 2009.
  18. Yi-Zin Lin (林逸仁), Wen-Jeng Ho and Hung-Bin Shiau, “Efficiency Improvement of Two-junction Solar Cell based on Spin-on-Film TiO2 AR-Coating,” OPT- 2009, pp. 139 (IP-015), Taipei, Taiwan ROC, Dec. 11-12, 2009.
  19. W. J. Ho, C. L. Chen(陳長利), Y. J. Lin,C. M. Yen and Y. J. Wu, “Fabrication and Characterization of Low-Cost InP Solar Cells Using Spin On Film (SOF) Processes, ” OPT- 2009, pp. 142 (IP-046), Taipei, Taiwan ROC , Dec. 11-12, 2009.
  20. C. L. Chen (陳長利), W. J. Ho , Y. J. Wu, Y. J. Lin and C. M. Yen,“Investigation Of InP Homo-Junction Solar Cells Using Spin On Film Processes,” 2009 MRS-T Annual Meeting (98年材料年會), pp.161 (04-0731), Hualien, Taiwan ROC , Nov. 26-28, 2009.
  21. 周育正,何文章,甯書煜,朱彥穎,“雙接面GaAs/Si太陽能電池以銦薄膜進行晶圓接合及銦膜對底層矽太陽能電池之影響,” 2009 MRS-T Annual Meeting (98年材料年會)pp.136 (04-0181), Hualien, Taiwan ROC , Nov. 26-28, 2009.
  22. C. L. Chen (陳長利), W. J. Ho , Y. J. Wu, C. M. Yen and Y. J. Lin, “Morphology of the (100)InP Surfaces Prepared by Spontaneous Anisotropic Chemical Etching for Ophoelectronics Devices,” 2009 MRS-T Annual Meeting (98年材料年會)pp.147 (04-0445), Hualien, Taiwan ROC, Nov. 26-28, 2009.
  23. W. J. Ho , Y. B. Chen (陳怡賓), C. H. Chiu, C. J. Chen and  J. J. Liou, “Performances of 1550 nm Single Photon Avalanche Photodiodes Based on AC-Coupled Passive Gate Mode, ” in National Symposium on Telecommunications  (NTS 2009), pp. 84 (Oral ID-173), Kaohsiung, Taiwan ROC, Dec. 11-12, 2009.
  24. 劉政杰何文章陳怡賓邱建閎陳政儒林哲民, “InGaAs/InP單光子雪崩型檢光二極體元件製作與分析,” 2009第三屆積體光機電科技與智慧財產權實務研討會, ID-028, Aug. 06, 2009.
  25. 陳怡賓何文章邱建閎陳政儒劉政杰林哲民, “1550 nm雪崩光二極體單光子特性與工作於被動抑制模式探討,” 2009第三屆積體光機電科技與智慧財產權實務研討會. ID-026, Aug. 06, 2009.
  26. C. L. Chen (陳長利), W. J. Ho , Y. J. Wu, Y. J. Lin and C. M. Yen, “Performance of InP Solar Cell based on Spin-on-Film (SOF) AR-Coating Process,” 2009 The 3rd Conference on Integrated Opto-Mechatronic Technology and Intellectual Property Rights, ID-027, Aug. 06, 2009.
  27. 周育正何文章甯書煜朱彥穎,“GaAs/Si雙接面太陽能電池之銦薄膜對底層矽太陽能電池之探討,” 2009第三屆積體光機電科技與智慧財產權實務研討會, ID-025, Aug. 06, 2009.
  28. Y. Z. Zhou (周育正), W. J. Ho, C. L. Chan, “The Characteristics of Spin-On TiOFilms for Photovoltaic Devices,” in Proc. Conference on Electronic Technology Symposium,” AP 26, Kaohsiung, Taiwan ROC, June 19, 2009.
  29. C. Y. Chung (張裕昌), W. J. Ho, “Analysis of In/p-InP Schottky Diode Characteristics,” 2009第七屆微電子技術發展與應用研討會, pp. 65-66, Kaohsiung, Taiwan ROC, May 22, 2009.
  30. S. Y. Ning (甯書煜), W. J. Ho, Y. C. Chou, “The low resistance Ohmic contacts for indium to n-InP,” 2009第七屆現代通訊科技應用學術研討會, pp. 273-278, Taipei, Taiwan ROC, March 20, 2009.
  31. C. L. Chan(陳長利), W. J. Ho, “Study on the spin-on SiO2 thin films for photonics devices,” 2009第七屆現代通訊科技應用學術研討會, pp. 268-272, Taipei, Taiwan ROC, March 20, 2009.
  32. C. H. Chiu (邱建閎), W. J. Ho, I. B. Chen, “The analysis of operating temperature and characteristics of avalanche photodiode for single photon detection,” 2009第七屆現代通訊科技應用學術研討會, pp. 257-262, Taipei, Taiwan ROC, March 20, 2009.
  33. I. B. Chen (陳怡賓), W. J. Ho, C. H. Chiu, “Simulations and measurements of single photon avalanche photodiode and passive quenching circuits,” 2009第七屆現代通訊科技應用學術研討會, pp. 211-215, Taipei, Taiwan ROC, March 20, 2009.
  34. C. L. Chan (陳長利), W. J. Ho, “Study on the spin-on SiO2 thin films for photonics devices,” Proceeding of. The 2Th Conference on Integrated Opto-Electro-Mechanical Technology (2009 IOME), No. 2009-001, Taipei, Taiwan ROC, March18, 2009.
  35. Wen-Jeng HoMu-Rung Yu(余沐榮), “Improving the Silicon Solar Cell Performances by SiO2/TiO2 Double Layer Antireflection Coating,” J. of National Taipei University of Technology, 42(1), pp. 17-29, 2009.
  36. M. R. Yee (余沐榮), W. J. Ho and Y. F. Shen, “二氧化矽/五氧化三鈦雙層抗反射膜於簡易結構單晶矽太陽能電池廣波域反射率分佈之探討,” in Annual Meeting of the Physical of Republic of China (PSROC2009), PE-61, Jan. 19-21, 2009.
  37. Z. J. Liu (劉政杰)W. J. HoL. F. Chou, Z. M, Chuang, Tom Jow, “Fabrication and Characterization of Planar-Type InP/InGaAs SAGCM Avalanche Photodiodes for Single-photon Optical Communications,”National Symposium on Telecommunications  (NTS 2008), p22, A7-2, 2008.
  38. Bing-Yi Lin (林秉毅), Wen-Jeng Ho, Yu-Feng Yang, “Picosecond 1550 nm Optical Pulse by Injection Locking and Gain-Switched for Optical Fiber Communications,”National Symposium on Telecommunications  (NTS 2008), p22, A7-1, 2008.
  39. L. F. Chou (周林甫), W. J. Ho, Z. J. Liu, Z. M, Chuang, R. T. Lee, Tom Jow, J.. Ohu,“Characterization of Zinc Diffusion In Undoped Indium Phosphide Using Polymer Diffusion Source and Spin-on Film Technique,” 2008 MRS-T Annual Meeting, P04-057 (P141), Taipei, Taiwan ROC, Nov. 21-22, 2008.
  40. Y. F. Shin (沈裕富), W. J. Ho, S. M. Lan,“Fabrication and Characterization of Screen Printing Silicon Solar Cell,” 2008 MRS-T Annual Meeting, P01-056 (P37), Taipei, Taiwan ROC, Nov. 21-22, 2008.
  41. Y. F. Shin (沈裕富), W. J. Ho, S. M. Lan,“Electrical Characterization of Ag-Paste Electrode by Printing in Silicon Solar Cells,” 2008 Intelligent Systems Conference on Engineering Applications, Poster P26, Tainan, Taiwan ROC, March 20, 2008.
  42. L. F. Chou (周林甫), W. J. Ho, Z. J. Liu, Z. M, Chuang, Tom Jow, R. T. Lee, J. V. Ohu,“The Characteristics of Zn-Doped InP Using SOF/RTA Process,”2008 Intelligent Systems Conference on Engineering Applications, Poster P25, Tainan, Taiwan ROC, March 20, 2008.
  43. Z. J. Liu (劉政杰),W. J. HoL. F. Chou, Z. M, Chuang, Tom Jow, R. T. Lee, J. V. Ohu, “SAGCM InP-InGaAs Avalanche Photodiodes Fabrication and Characterization For Optical Communications,” in Proc. The 6Th Conference on Communication Applications, pp. 201-205, Taipei, Taiwan ROC, March 14, 2008.
  44. Bing-Yi Lin (林秉毅), Wen-Jeng Ho, Ru-Da Tung, “Miniaturized High-Sensitivity Metal Detection Sensor,” in Proc. The 6Th Conference on Communication Applications, pp. 185-188, Taipei, Taiwan ROC, March 14, 2008.
  45. Sheng-Ying Wu (吳昇潁),  Wen-Jeng Ho, Yao-Bo Chen, Jian-Liang Pan, Chih-Hung Wu, Hwa-Yuh Shin, “Low Resistance Ohmic Contact To InP,” OPT- 2007, AP-155, Taichung, Taiwan ROC, Nov. 30-Dec. 1, 2007.
  46. Yao-Bo Chen (陳堯博),  Wen-Jeng Ho, Sheng-Ying Wu, Jian-Liang Pan, Chih-Hung Wu, Hwa-Yuh Shin, “High Conversion Efficiency InP-Based Solar Cells,” OPT- 2007, IP-024, Taichung, Taiwan ROC , Nov.30-Dec. 1, 2007.
  47. Yao-Bo Chen (陳堯博),  Wen-Jeng Ho, Sheng-Ying Wu, Jian-Liang Pan, Chih-Hung Wu, Hwa-Yuh Shin, “Low Resistance Contact System For InP/InGaAs/InP Solar Cells,” 2007 MRS-T Annual Meeting,P01-012(152), Hsinchu, Taiwan ROC, Nov. 11-16, 2007.
  48. 吳念霖,何文章,許正榮,林正忠,廖虹惠,呂海涵,改良式被動光網路的即時監控技術” BP-0391215-16日,新竹市,2006年光電科技研討會 (OPT2006研討會)
  49. 許正榮,何文章,吳念霖,林正忠,呂海涵,吳嘉憲,以光時域反射之鬼影特性進行WDM-PON光纖故障偵測技術研究BO-391215-16日,新竹市,2006年光電科技研討會 (OPT2006研討會)
  50. 潘建良,何文章,吳昇潁,陳堯博,吳志宏,辛華煜,“InP-based太陽能電池使用Ni/Ge/Au/Ni/Au金屬的低電阻歐姆接觸和功率損失研究AP-0831215-16日,新竹市,2006年光電科技研討會 (OPT2006研討會)
  51. C. D. Yang, P. H. Lei, F. M. Lee, M. C. Wu, C. L. Ho, W. J. Ho, and J. Huang, “A Regrowth-Free Approach to Monolithic Integration InP Crystallographic Slop with Waveguide Photodetectors,” 2005第三屆微電子技術發展與應用研討會,” Kaohsiung, Taiwan, pp. 62 (May 2005).
  52. C. L. Tsai, F. M. Lee, C. W. Hu, M. C. Wu, S. C. Ko, H. L. Wang, and W. J. Ho, “Silicon oxide-planarized single-mode 850-nm VCSELs with TO package for fiber optic applications”, Second Asia-Pacific Workshop on Wide gap Semiconductors (APW 2005), Hsinchu, Taiwan, pp. 105-107, March 2005.
  53. T.-P. Hsieh, H.-S. Chang, W.-Y. Chen, W.-H. Chang, T.-M. Hsu, N.-T. Yeh, W.-J. Ho, P.-C. Chiu, and J.-I. Chyi, “Growth of Low-Density InGaAs Quantum Dot for Single Photon Source”, Electron. Devices and Materials Symposium, Kaohsiung, Taiwan, R.O.C., 2005.
  54. N. -T. Yeh, P. -C. Chiu, C. C. Hong, Y. T. Tsai, T. -P. Hsieh, J. -I. Chyi and W. -J. HoInGaAsN/GaAs Quantum Well Lasers Using Two-step Growth Technique” Intl. Electron Devices and Materials Symposia, Hsinchu, Taiwan, 2004. (SCI)
  55. T.-P. Hsieh, N.-T. Yeh, P.-C. Chiu, W.-H. Chang, T.-M. Hsu, W. -J. Ho, and J.-I. Chyi, “1.55 m Emission from InAs  Quantum Dots Grown on GaAs“, Optics and Photonics Taiwan,., 2004.
  56. 許育仁,楊智超,林佳儒,何文章ICP-RIE法蝕刻二氧化矽微透鏡” 台灣光電科技研討會(OPT 2004).
  57. 郭盛輝,洪永智,王柏凱,潘燕廷,姚久琳,李三良,何文章應用於高速光開關之偏振不敏感半導體光放大器” 台灣光電科技研討會(OPT 2004).
  58. 洪朝基王海琳,廖虹惠,何文章“250百萬位元每秒磷化銦鎵650奈米共振腔發光二極體” 台灣光電科技研討會(OPT 2004).
  59. 江衍旭,廖虹惠,何文章,廖枝旺,“Transceiver with speed above 1.25 Gb/s in FXI Small Form Factor” 台灣光電科技研討會(OPT 2004).
  60. 雷伯薰楊奇達吳孟奇林嘉堅何文章黃潤杰, “單模態1.3微米波長砷化鋁銦鎵多重量子井分佈回授型雷射” 台灣光電科技研討會(OPT 2004).
  61. C. D. Yang, P. H. Lei, F. H. Huang, M. C. Wu, C. L. Ho, W. J. Ho, J. Huang, and Y. J. Chan, ”InGaAsP-InGaAs-InP Waveguide photodetector integrated with light input tapered-SiOx Facet,” Proceedings of Optics and Photonics Taiwan (OPT), 2004
  62. Y. H. Huang, C. C. Yang, D. J. Pong, M. C. Wu, C. L. Ho, I. M. Liu, C. J. Lin, G. C. Lin, J. W. Liaw, and W. J. Ho, “Alignment tolerance enlargement of a high-speed photodiode by a self-positioned ball-lens” Proceedings of Optics and Photonics Taiwan (OPT), 2004.
  63. C. C. Yang, Y. H. Huang, D. J. Pong, M. C. Wu, C. L. Ho, I. M. Liu, C. J. Lin, J. W. Liaw, W. J. Ho, “A Simple Passive Coupling Scheme for High-Speed Photodiode Using a Fiber-Hole Technology”, Proceedings of Optics and Photonics Taiwan (OPT), 2004.
  64. 林嘉堅葉作球何文章, “1.3微米免冷卻AlGaInAs/InP DFB雷射台灣光電科技研討會(OPT 2004).
  65. M. Y. Wu, C. L. Tsai, C. D. Yang, M. C. Wu, Y. H. Huang, and W. J. Ho, “Tensilestrain GaInP/GaInAsP quantum-barrier study on 1.3 μ m compressive-strain GaInAsP/GaInAsP multiple quantum-well laser diodes,” Optics and Photonics Taiwan, Taipei, Taiwan, pp. 65-67 (2003).
  66. M. Y. Wu, C. L. Tsai, C. D. Yang, M. C. Wu, Y. H. Huang, and W. J. Ho, “Enhancement of carrier injection of AlGaInAs/InP SC-MQW LDs using AlGaInAs graded-composition layer”, Electron Devices and Materials Symposium, Keelung, Taiwan, 351-353, December 2003.
  67. D. Yang, M. Y. Wu, C. L. Ho, M. C. Wu, W. J. Ho, S. C. Ko, C. J. Lin, and Y. J. Hsu, “Distributed Bragg Reflector (DBR) Combined with long-wavelength P-I-N photodetectors by epitaxial lift- off (ELO) technique,” Proceedings of The 2002 Annual Conference of the Chinese Society for Materials ScicenceTaipei, Taiwan, PR-32, Nov.( 2002)
  68. Ching-Yun Chien, Ron Xian, Pei-Lin Chiang, San-Liang Lee, C.-C. Lin,and Wen-Jeng Ho, ¨ A fast wavelength-tunable transmitter for optical switching applications,” Proceedings of Optics and Photonics Taiwan (OPT). (2002)
  69. Ing-Fa Jang, Chiu-Lin Yao, San-Liang Lee, Wen-Jeng Ho, and Chia-Chien Lin, “Monolithically Integrated SGDBR CWDM Sources of 20-nm Channel Spacing”, Proceedings of Optics and Photonics Taiwan (OPT). (2002)
  70. D. J. Pong, C. L. Ho, C. D. Yang, M. Y. Wu, C. J. Lin, W. J. Ho, and M. C. Wu, “Self-Terminated Oxide Polish (STOP) Technique for the Ridge Laser Diode Fabrication,” Electronics Devices and Materials Symposia (EDMS), Kaohsiung, Taiwan, pp. 852, (2001)
  71. M. W. Wu, D. J. Pong, C. L. Ho, L. W. Laih, B. R. Wu, M. Y. Wu, C. D. YangW. J.Ho, and M. C. Wu, “The Effect of Rapid Thermal Annealing on Carbon-Doped InP/InGaAs Single Heterojunction Bipolar Transistors,” Electron Devices and Materials Symposium, Kaohsiung, Taiwan, Dec. 2001, pp. 147-149.(2001)
  72. J. Pong, C. L. Ho, M. Y. Wu, C. D. YangW. J. Ho, and M. C. Wu, “High-Speed1.55-µm AlGaInAs Ridge-Waveguide Semiconductor Laser Diode,” Optics and Photonics TaiwanChayi, Taiwan, December 2001, pp. 31-33.(2001)
  73. C. D. YangC. L. Ho, D. J. Pong, M. Y. Wu, W. J. Ho, and M. C. Wu, “Light-Funnel-Integrated (LIFI) Edge-Coupled InGaAs P-I-N Photodiode,” Electronics Devices and Materials Symposia (EDMS), Kaohsiung, Taiwan, pp. 819. (2001)
  74. Ing-Fa Jang, San-Liang Lee, and Wen-Jeng Ho, “Accurate and Stable wavelength registration of DWDM laser arrays,” Proceedings of Optics and Photonics Taiwan (OPT-2001).paper FA2-5. (2001). (SCI/EI)
  75. D. J. Pong, C. L. Ho, M. Y. Wu, C. D. Yang, C. J. Lin, W. J. Ho, and M. C. Wu, “Self-terminated oxide polish (STOP) techniquefor the ridge laser diode fabrication” in Proc. EDMS, Taiwan (2000).
  76. C. D. Yang, C. L. Ho, D. J. Pong, M. Y. Wu, W. J. Ho, and M. C. Wu, “Light-funnel-integrated (LIFI) edge-coupled InGaAs p-i-n photodiode” in Proc.  EDMS, Taiwan (2000).
  77. M. W. Wu, D. J. Pong, C. L. Ho, L. W. Laih, B. R. Wu, M. Y. Wu, C. D. Yang, W. J. Ho, and M. C. Wu, “The Effect of rapid thermal annealing on carbon-doped InP/InGaAs single heterojunction bipolar transistors” in Proc. EDMS, Taiwan (2000).
  78. C. Y. Lee, H. P. Shiao, T. T. Shi, W. J. Ho, and M. C. Wu, “Growth and characterization of InAsP/InP strained multiple quantum well lasers grown by metalorganic chemical vapor deposition” in Proc. EDMS, Taiwan (2000).
  79. C.-Y. Wang, W.-H. Wang, B.-J. Bong, S.-L. Lee, I.-F. Jang, W.-J. Ho, and T.-T. Shih, “Low Threshold Distributed Bragg Reflector Lasers,” Optics and Photonics Taiwan’99, paper FR-I1-A4, (1999)
  80. Hung-Hui Shih, Wei-Han Wang, Jau-Yang Su, Sun-Chien Ko, Wen-Jeng Ho, Tien-Tsorng Shih, “Reactive Ion etching of GaAs and AlGaAs Using a Mixture of Cl2 and BCl3in Proc. p.235-238, in Proc OPT, Taiwan (1999).
  81. Hung-Hui Shih, Jau-Yang Su, Wen-Jeng Ho, Tien-Tsorng Shih, “High Performance Electron Cyclotron Resonance Plasma Etching of InP in CH4/H2/Arin Proc. EDMS, Taiwan (1999).
  82. W. J. Ho, C. L. Ho, M. C. Wu, and J. W. Liaw, “Effectiveness of the pseudowindow for edge-coupled InP/InGaAs/InP pin photodiodes” in Proc. EDMS, Taiwan (1999).
  83. C. J. Lin, H. L. Wang, L.W. Lai, S. C. Ko, B. J. Pong, W. J. Ho, T. T. Shih, “Simulation of Narrow-Beam Divergence 1.3-m Multi-Quantum-Well Laser Diode with Laterally Tapered Buried Heterostructure for Direct Coupling to Single Mode Fiber”,  in Proc. OPT, Taiwan (1999).
  84. B. J. Pong, C. Y. Wang, H. L. Wang, S. C. Ko, W. J. Ho, T.T. Shih, “Ion-Implantation for the Current Blocking of DBR Laser Diode”, in Proc. OPT, Taiwan (1999).
  85. W. J. Ho, T. A. Dai, W. Lin, Y. K. Tu, and M. C. Wu, "High-uniformity twelve-channel InGaAs p-i-n photodiode array", in Proc. RSS., Kaoshiung, Taiwan (1995).

 

Patent

 

United States Patent  : 
 

  1. Bandwidth enhancement of transimpedance amplifier by capacitive peaking design」,United States Patent 6,353,366. (2002)
  2. Self-Aligned Fabrication Method for Ridge-Waveguide Semiconductor Laser,United States Patent 66,503,770. (2003)
  3. Technique for a surface-emitting laser diode with a metal reflector」, United States Patent 6,656,756. (2003)
  4. Novel for technique a surface emitting laser diode with a metal reflector」,United States Patent Application 20030040133.
  5. Method for improving a high-speed edge-coupled photodetector , United States Patent 6,808,957.(2004)
  6. Process for fabricating a micro-optical lensUnited States Patent 7,097,778. (2006)

ROC Patent : 
 

  1. 「利用電容使轉阻放大器產生極點頂起現象而增進其操作頻寬」,中華民國發明專利,發明第一三0三四五號。(2001/04/11)
  2. 「選擇區域濕氧化面射型雷射之製造方法",中華民國發明專利,發明第一三六四四四號。(2001/07/21)
  3. 「光傳輸模組的計與製作",中華民國發明專利,發明第一四五八三五號。(2001/11/21)
  4. 「邊緣耦合型檢光器」,中華民國發明專利,發明第一六二九七三號。(2002/09/11)
  5. 「一種具金屬反射鏡之面射型雷射二極體之製作方法」,中華民國發明專利,發明第170347號。(2002/12/21)
  6. 「寬波長範圍工作的P-I-N檢光器及其製造方法」,中華民國發明專利,發明第164376號。(2002/10/11)
  7. 「具薄金屬及透明ITO之面射型雷射元件及其製作方法」,中華民國發明專利,發明第178526號。(2003/05/21)
  8. 「一種脊狀波導半導體雷射之自我對準式製程方法」,中華民國發明專利,發明第185226號。(2003/09/01)
  9. 「被動對準式雷射封裝」,中華民國發明專利,發明第I221328號。(2004/09/21)
  10. 「站立式微透鏡之製程方法」,中華民國發明專利,發明第I222531號。(2004/10/21)
  11. 「利用形狀記憶合金所進行之TO-Can高壓封蓋方法」,中華民國發明專利,發明第I225289號。(2004/12/11)
  12. 「一種改善邊緣耦合型檢光器之耦合誤差容忍度的製作方法」,中華民國發明專利,發明第199343號。(2004/04/01)
  13. 「高速光電元件之被動封裝方式」,中華民國發明專利,發明第I226711號。(2005/01/11)
  14. 「一種微光學透鏡的製造方法」,中華民國發明專利,發明第I258608號。(2006/07/21)
  15. 「一種提高光電元件耦合容忍度之封裝方式」,中華民國發明專利,發明第 I271873號。(2007/01/21)
  16. 「一種以精密化學拋光法研製透鏡技術」,中華民國專利,發明第I272996號。(2007/02/11)
  17. 「利用柱狀結構浸入高分子膜製作站立式微透鏡之方法」,中華民國發明專利,發明第 I302988號。(2008/11/11)
  18. 「利用遠端注入技術所建構之直調式光纖有線電視傳輸系統」,中華民國發明專利,公開號: 200849857。(2008/12/16)
  19. 「全雙工微波/光纖傳輸系統」,中華民國發明專利,公開號:200849858。(2008/12/16)
  20. 「一種以外部光源注入技術所建構之直調式光訊號發射系統」,中華民國發明專利,公開號: 200826526。(2008/12/16)