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Department of Electro-Optical Engineering, Taipei Tech
Home > People > Faculty > Yao-Hui Chen
Yao-Hui Chen

 

Yao-Hui Chen
Professor
 
Office: Everlight Building, Room 1013
Phone: +886-2-2771-2171  ext 4628
Fax: +886-2-8773-3216
Lab: Photoreflectance Lab
Website: 
 

 

Bio

Y.H. Chen was born in Taiwan,R.O.C.,in 1959.  He received the B.S. degree in physics from the National Taiwan University in 1982, the M.S. degree in electroptics from the National Chiao-Tong University in 1987, and the Ph.D. degree in electrical engineering from the National Taiwan University in 1994.  Since 1987,he has been with the Department of Physics at the National Taipei Institute of Technology. In 1994,he become Associate Professor,teaching a course on general physics and optoelectronics.He is currenly involved in research on microstructures of semicondctor devices using modulation soectroscopy.

Education

  • PhD. Department of Electrical Engineering, National Taiwan University, 1994
  • M.S.Institute of Electro-optics, National Chiao-Tong University, 1987
  • B.S., Department of Physics, National Taiwan University, 1982

Experience

  • Professor, Department of Electro-Optics Engineering, National Taipei University of Technology, 2000.08 ~ present 
  • Associate Professor, Department of Electro-Optics Engineering, National Taipei University of Technology, 1994.08 ~ 2000.08

Research Area

  • Photoreflectance

Publications

Journal Papers

  1. Y.H.Chen, "Direct determination of Fermi level pinning by the amplitude of photoreflectance spectra", J. of National Taipei University of Technology, 32(1), 1(1999).
  2. Y.H.Chen, "Carrier concentration determinated by photoreflectance", J. of National Taipei University of Technology, 32(1), 9(1999).
  3. C.H.Chan, Y.F.Chen, M.C.Chen, H.H.Lin, G.J.Jan, and Y.H.Chen,"Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes", J. Appl. Phys., 84, 1595(1998).
  4. Y.H.Chen, C.H.Chan, and G.J.Jan,"Investigation of GaAs/AlGaAs multiple quantum well waveguides involving unconfined energy states", J. Vacuum Sci. and Technol., B, 6, 570(1998).
  5. C.H.Chan, M.C.Chen, H.H.Lin, Y.F.Chen, G.J.Jan, and Y.H.Chen,"Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy", Appl. Phys. Lett., 72, 1208(1998).
  6. Y.H.Chen,"Photoreflectance characterization of strained (111)B InGaAs/GaAs quantum well p-i-n diode structures", J. of National Taipei University of Technology, 31(1), 47(1998).
  7. Y.H.Chen,"Fast Fourier transformation on photoreflectance spectra", J. of Taipei Institute of Technology, 30(2), 1(1997).
  8. Y.H.Chen and G.J.Jan,"Photoreflectance characterization on the InAlAs/InGaAs heterojunction bipolar transistors", IEEE J. Quantum Electron., 33, 574(1997).
  9. Y.H.Chen,"Study of miniband dispersion of the unconfined states of multiple quantum well waveguides", J. of Taipei Institute of Technology, 30(1), 1(1997).
  10. Y.H.Chen,"Room-temperature photoreflectance as an efficient tool for growth studies of InAlGaAs on InP by molecular beam epitaxy", J. of Taipei Institute of Technology, 29(2), 1(1996).
  11. Y.H.Chen,"Fast Fourier transformation of photoreflectance spectrum", J. of Taipei Institute of Technology, 13(1996).
  12. Y.H.Chen,"Photoreflectance characterization of InAlAs/InGaAs heterojunction bipolar transitors with various spacer thickness", J. of Taipei Institute of Technology, 29(1), 12(1996).
  13. K.L.Chen, H.H.Lin, G.J.Jan, Y.H.Chen, and P.K.Tseng,"Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers", J. Appl. Phys., 78, 4035(1995).
  14. Y.H.Chen,"Determing energy-band offsets of InAlAs/InGaAs heterostructure using only photoreflectance data」, J. of Taipei Institute of Technology, 28(2), 1(1995).
  15. Y.H.Chen and G.J. Jan,"Photoreflectance study on the two-dimensional electron gas of InAlAs/InGaAs heterojunction bipolar trabsistor grown by molecular beam epitaxy", J. Appl. Phys., 77, 6681(1995).
  16. K.L.Chen, H.H.Lin, G.J.Jan, Y.H.Chen, and P.K.Tseng,"Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers", Appl. Phys. Lett., 66, 2697(1995).
  17. Y.H.Chen,"Photoreflectance characterization of InAlAs/InGaAs heterojunction bipolar transistor with a 300 Å spacer", J. of Taipei Institute of Technology, 28(1), 33(1995).
  18. Y.H.Chen,"The nature of photoreflectance line shape in GaAs", J. of Taipei Institute of Technology,28(1), 21(1995).
  19. Y.H.Chen,"Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor", J. of Taipei Institute of Technology, 27(2), 1(1994).
  20. Y.H.Chen, K.T.Hsu, K.L.Chen, H.H.Lin, and G.J.Jan,"Room-temperature photoreflectance characterization of an InAlAs/InGaAs heterojunction bipolar transistor structure including two-dimensional electron gas", Japan, J. Appl. Phys., 33, 2448(1994).
  21. K.T.Hsu, Y.H.Chen, K.L.Chen, H.P.Chen, H.H.Lin, and G.J.Jan,"Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor", Appl. Phys. Lett., 64, 1974(1994).

- Conference Papers

  1. Y.H.Chen and R.M.Chen, 「Fermi level pinning of GaAs at room temperature directly determined by the amplitude of photoreflectance spectra」, Proc. SPIE, 423(2000).
  2. Y.H.Chen, "Fast Fourier transformation on photoreflectance spectra", 臺灣光電科技研討會, 交通大學, 新竹(1997).
  3. C.M.Lai, P.F.Yang, H.H.Lin, Y.H.Chen, and G.J.Jan, "Photoreflectance characterization of InGaAsP strained quantum well structures", International Symposium on control of semiconductor interfaces, Karuizawa, Japan(1996).
  4. Y.H.Chen, "Determing energy-band offsets of InAlAs/InGaAs heterojunction using only photoreflectance data", 光譜技術與表面科學研討會(1995).